SN74AUP1G00 - Low-Power Single Two-Input Positive-NAND Gate

Updated : 2020-01-09 14:36:56
Description
Features

  • ESD Performance Tested Per JESD 22
    • 2000-V Human-Body Model (A114-B, Class II)
    • 1000-V Charged-Device Model (C101)
  • Available in the Ultra Small 0.64 mm2 Package (DPW) with 0.5-mm Pitch
  • Low Static-Power Consumption (ICC = 0.9 µA Max)
  • Low Dynamic-Power Consumption (Cpd = 4 pF Typical at 3.3 V)
  • Low Input Capacitance (Ci = 1.5 pF Typical)
  • Low Noise Overshoot and Undershoot <10% of VCC
  • Ioff Supports Live Insertion, Partial-Power-Down Mode, and Back-Drive Protection
  • Input Hysteresis Allows Slow Input Transition and Better Switching Noise Immunity at Input (Vhys = 250 mV Typical at 3.3 V)
  • Wide Operating VCC Range of 0.8 V to 3.6 V
  • Optimized for 3.3-V Operation
  • 3.6-V I/O Tolerant to Support Mixed-Mode Signal Operation
  • tpd = 4.8 ns Maximum at 3.3 V
  • Suitable for Point-to-Point Applications
  • Latch-Up Performance Exceeds 100 mA Per JESD 78, Class II