The OPA659 combines a very wideband, unity-gain stable, voltage-feedback operational amplifier with a JFET-input stage to offer an ultra-high dynamic range amplifier for high impedance buffering in data acquisition applications such as oscilloscope front-end amplifiers and machine vision applications such as photodiode transimpedance amplifiers used in wafer inspection.
The wide 650-MHz unity-gain bandwidth is complemented by a very high 2550-V/µs slew rate.
The high input impedance and low bias current provided by the JFET input are supported by the low 8.9-nV/&radic:Hz input voltage noise to achieve a very low integrated noise in wideband photodiode transimpedance applications.
Broad transimpedance bandwidths are possible with the high 350-MHz gain bandwidth product of this device.
Where lower speed with lower quiescent current is required, consider the OPA656. Where unity-gain stability is not required, consider the OPA657.
Products containing the "OPA659" keyword are: OPA659EVM , OPA659IDBVR , OPA659IDBVR , OPA659IDBVRG4 , OPA659IDBVT , OPA659IDBVT , OPA659IDBVTG4 , OPA659IDRBR , OPA659IDRBR , OPA659IDRBT , OPA659IDRBT| Status | ACTIVE |
| Architecture | FET^Voltage FB |
| Number of channels | 1 |
| Total Supply Voltage | 13 |
| BW @ Acl | 650 |
| Acl, min spec gain | 2 |
| Slew Rate | 2550 |
| Vn at flatband | 8.9 |
| Vn at 1 kHz | 8.9 |
| Iq per channel | 30.5 |
| Vos (offset voltage @ 25 C) | 5 |
| Rail-to-rail | No |
| Features | N/A |
| Rating | Catalog |
| Operating temperature range | -40 to 85 |
| Package Group | SON|8 |
| Approx. price | 2.95 | 1ku |
| Package size: mm2:W x L (PKG) | See datasheet (SON) |
| CMRR | 70 |
| Input bias current | 50 |
| Offset drift | 10 |
| GBW | 650 |
| Output current | 70 |
| 2nd harmonic | 79 |
| 3rd harmonic | 100 |
| @ MHz | 10 |
| Radiation, TID | |
| Radiation, SEL |