The OPA659 combines a very wideband, unity-gain stable, voltage-feedback operational amplifier with a JFET-input stage to offer an ultra-high dynamic range amplifier for high impedance buffering in data acquisition applications such as oscilloscope front-end amplifiers and machine vision applications such as photodiode transimpedance amplifiers used in wafer inspection.
The wide 650-MHz unity-gain bandwidth is complemented by a very high 2550-V/µs slew rate.
The high input impedance and low bias current provided by the JFET input are supported by the low 8.9-nV/&radic:Hz input voltage noise to achieve a very low integrated noise in wideband photodiode transimpedance applications.
Broad transimpedance bandwidths are possible with the high 350-MHz gain bandwidth product of this device.
Where lower speed with lower quiescent current is required, consider the OPA656. Where unity-gain stability is not required, consider the OPA657.
Products containing the "OPA659" keyword are: OPA659EVM , OPA659IDBVR , OPA659IDBVR , OPA659IDBVRG4 , OPA659IDBVT , OPA659IDBVT , OPA659IDBVTG4 , OPA659IDRBR , OPA659IDRBR , OPA659IDRBT , OPA659IDRBTStatus | ACTIVE |
Architecture | FET^Voltage FB |
Number of channels | 1 |
Total Supply Voltage | 13 |
BW @ Acl | 650 |
Acl, min spec gain | 2 |
Slew Rate | 2550 |
Vn at flatband | 8.9 |
Vn at 1 kHz | 8.9 |
Iq per channel | 30.5 |
Vos (offset voltage @ 25 C) | 5 |
Rail-to-rail | No |
Features | N/A |
Rating | Catalog |
Operating temperature range | -40 to 85 |
Package Group | SON|8 |
Approx. price | 2.95 | 1ku |
Package size: mm2:W x L (PKG) | See datasheet (SON) |
CMRR | 70 |
Input bias current | 50 |
Offset drift | 10 |
GBW | 650 |
Output current | 70 |
2nd harmonic | 79 |
3rd harmonic | 100 |
@ MHz | 10 |
Radiation, TID | |
Radiation, SEL |