TLV342A - Low-Voltage, Rail-to-Rail Output CMOS Operational Amplifiers

Updated : 2020-01-09 14:20:18
Description

The TLV34xx devices are single and dual CMOS operational amplifiers, respectively, with low-voltage, low-power, and rail-to-rail output swing capabilities. The PMOS input stage offers an ultra-low input bias current of 1 pA (typical) and an offset voltage of
0.3 mV (typical). For applications requiring excellent dc precision, the A grade (TLV34xA) has a low offset voltage of 1.25 mV (maximum) at 25°C.

These single-supply amplifiers are designed specifically for ultra-low-voltage (1.5 V to 5 V) operation, with a common-mode input voltage range that typically extends from –0.2 V to 0.5 V from the positive supply rail.

The TLV341 (single) and TLV342 (dual) in the RUG package also offer a shutdown (SHDN) pin that can be used to disable the device. In shutdown mode, the supply current is reduced to 45 pA (typical). Offered in both the SOT-23 and smaller SC70 packages, the TLV341 is suitable for the most space-constrained applications. The dual TLV342 is offered in the standard SOIC, VSSOP, and X2QFN packages.

An extended industrial temperature range from –40°C to 125°C makes the TLV34xx suitable in a wide variety of commercial and industrial applications.

Products containing the "TLV342A" keyword are: TLV342AID , TLV342AIDE4 , TLV342AIDG4 , TLV342AIDGKR , TLV342AIDGKRG4 , TLV342AIDR , TLV342AIDR , TLV342AIDRE4 , TLV342AIDRG4
Features

  • 1.8-V and 5-V Performance
  • Low Offset (A Grade)
    • 1.25 mV Maximum (25°C)
    • 1.7 mV Maximum (–40°C to 125°C)
  • Rail-to-Rail Output Swing
  • Wide Common-Mode Input Voltage Range: –0.2 V
    to (V+ – 0.5 V)
  • Input Bias Current: 1 pA (Typical)
  • Input Offset Voltage: 0.3 mV (Typical)
  • Low Supply Current: 70 µA/Channel
  • Low Shutdown Current:
    10 pA (Typical) Per Channel
  • Gain Bandwidth: 2.3 MHz (Typical)
  • Slew Rate: 0.9 V/µs (Typical)
  • Turnon Time From Shutdown: 5 µs (Typical)
  • Input Referred Voltage Noise (at 10 kHz):
    20 nV/√Hz
  • ESD Protection Exceeds JESD 22
    • 2000-V Human-Body Model (HBM)
    • 750-V Charged-device model (CDM)

Parametrics
StatusACTIVE
Approx. price0.41 | 1ku
Number of channels2
Total Supply Voltage1.5
Rail-to-railOut
GBW2.2
Slew Rate0.9
Package GroupSOIC|8
Vos (offset voltage @ 25 C)1.25
Iq per channel0.07
Vn at 1 kHz33
RatingCatalog
Operating temperature range-40 to 125
Package size: mm2:W x L (PKG)[pf]8SOIC[/pf]: 29 mm2: 6 x 4.9 (SOIC|8)
Offset drift1.9
FeaturesN/A
Input bias current200
CMRR90
Output current113
ArchitectureCMOS
Radiation, TID
Radiation, SEL
Input common mode headroom (to negative supply)-0.2
Input common mode headroom (to positive supply)-0.5
Output swing headroom (to negative supply)0.018
Output swing headroom (to positive supply)-0.07