TLC27M4A - LinCMOS™ Precision Quad Operational Amplifier

Updated : 2020-01-09 14:20:19
Description

The TLC27M4 and TLC27M9 quad operational amplifiers combine a wide range of input offset voltage grades with low offset voltage drift, high input impedance, low noise, and speeds comparable to that of general-purpose bipolar devices.These devices use Texas Instruments silicon-gate LinCMOSTM

LinCMOS is a trademark of Texas Instruments Incorporated. technology, which provides offset voltage stability far exceeding the stability available with conventional metal-gate processes.

The extremely high input impedance, low bias currents, make these cost-effective devices ideal for applications that have previously been reserved for general-purpose bipolar products, but with only a fraction of the power consumption.

Four offset voltage grades are available (C-suffix and I-suffix types), ranging from the low-cost TLC27M4 (10 mV) to the high-precision TLC27M9 (900 uV). These advantages, in combination with good common-mode rejection and supply voltage rejection, make these devices a good choice for new state-of-the-art designs as well as for upgrading existing designs.

In general, many features associated with bipolar technology are available on LinCMOSTM operational amplifiers, without the power penalties of bipolar technology. General applications such as transducer interfacing, analog calculations, amplifier blocks, active filters, and signal buffering are easily designed with the TLC27M4 and TLC27M9. The devices also exhibit low voltage single-supply operation, and low power consumption, making them ideally suited for remote and inaccessible battery-powered applications. The common-mode input voltage range includes the negative rail.

A wide range of packaging options is available, including small-outline and chip-carrier versions for high-density system applications.

The device inputs and outputs are designed to withstand -100-mA surge currents without sustaining latch-up.

The TLC27M4 and TLC27M9 incorporate internal ESD-protection circuits that prevent functional failures at voltages up to 2000 V as tested under MIL-STD-883C, Method 3015; however, care should be exercised in handling these devices, as exposure to ESD may result in the degradation of the device parametric performance.

The C-suffix devices are characterized for operation from 0°C to 70°C. The I-suffix devices are characterized for operation from -40°C to 85°C. The M-suffix devices are characterized for operation over the full military temperature range of -55°C to 125°C.

AVAILABLE OPTIONS
TA

VIOmax
AT 25°C
PACKAGE
CHIP
FORM
(Y)
SMALL OUTLINE
(D)
CHIP CARRIER
(FK)
CERAMIC DIP
(J)
PLASTIC DIP
(N)
TSSOP
(PW)
0°C to 70°C
900 uV
TLC27M9CD
--
--
TLC27M9CN
--
--
2 mV
TLC27M4BCD
--
--
TLC27M4BCN
--
--
5 mV
TLC27M4ACD
--
--
TLC27M4ACN
--
--
10 mV
TLC27M4CD
--
--
TLC27M4CN
TLC27M4CPW
TLC27M4Y
-40°C to 85°C
900 uV
TLC27M9ID
--
--
TLC27M9IN
--
--
2 mV
TLC27M4BID
--
--
TLC27M4BIN
--
--
5 mV
TLC27M4AID
--
--
TLC27M4AIN
--
--
10 mV
TLC27M4ID
--
--
TLC27M4IN
TLC27M41PW
--
-55°C to 125°C
900 uV
TLC27M9MD
TLC27M9MFK
TLC27M9MJ
TLC27M9MN
--
--
10 mV
TLC27M4MD
TLC27M4MFK
TLC27M4MJ
TLC27M4MN
--
--

The D and PW package is available taped and reeled. Add R suffix to the device type (e.g., TLC279CDR).

Products containing the "TLC27M4A" keyword are: TLC27M4A , TLC27M4AC , TLC27M4ACD , TLC27M4ACD3 , TLC27M4ACDG4 , TLC27M4ACDP3 , TLC27M4ACDR , TLC27M4ACDR , TLC27M4ACDRG4 , TLC27M4ACN , TLC27M4ACN3 , TLC27M4ACNE4 , TLC27M4ACNE4 , TLC27M4ACNG4 , TLC27M4ACNP3 , TLC27M4ACNS , TLC27M4ACNSR , TLC27M4ACNSRG4 , TLC27M4AID , TLC27M4AID
Features

  • Trimmed Offset Voltage:
    TLC27M9...900 uV Max at TA = 25°C,
    VDD = 5 V
  • Input Offset Voltage Drift...Typically
    0.1 uV/Month, Including the First 30 Days
  • Wide Range of Supply Voltages Over Specified Temperature Range:
    0°C to 70°C...3 V to 16 V
    -40°C to 85°C...4 V to 16 V
    -55°C to 125°C...4 V to 16 V
  • Single-Supply Operation
  • Common-Mode Input Voltage Range Extends Below the Negative Rail (C-Suffix, I-Suffix Types)
  • Low Noise...Typically 32 nV/ Hz\
    at f = 1 kHz
  • Low Power...Typically 2.1 mW at TA=25°C, VDD = 5 V
  • Output Voltage Range Includes Negative Rail
  • High Input Impedance...1012 Typ
  • ESD-Protection Circuitry
  • Small-Outline Package Option Also Available in Tape and Reel
  • Designed-In Latch-Up Immunity

Parametrics
StatusACTIVE
Approx. price0.42 | 1ku
Number of channels4
Total Supply Voltage3
Rail-to-railIn to V-
GBW0.525
Slew Rate0.46
Package GroupPDIP|14
Vos (offset voltage @ 25 C)5
Iq per channel0.105
Vn at 1 kHz32
RatingCatalog
Operating temperature range-40 to 85
Package size: mm2:W x L (PKG)See datasheet (PDIP)
Offset drift1.7
FeaturesN/A
Input bias current60
CMRR91
Output current8
ArchitectureCMOS
Radiation, TID
Radiation, SEL
Input common mode headroom (to negative supply)-0.3
Input common mode headroom (to positive supply)-1.0
Output swing headroom (to negative supply)0.03
Output swing headroom (to positive supply)-1.1