LMH5401-SP - Radiation Hardness Assured (RHA) 6.5GHz Ultra Wideband Fully Differential Amplifier

The LMH5401-SP is a very high-performance, radiation hardened, differential amplifieroptimized for radio frequency (RF), intermediate frequency (IF), or high-speed, dc-coupled,time-domain applications. The device is ideal for dc- or ac-coupled applications that may require asingle-ended-to-differential (SE-DE) conversion when driving an analog-to-digital converter (ADC).The LMH5401-SP generates very low levels of second- and third-order distortion when operating inSE-DE or differential-to-differential (DE-DE) mode.

The amplifier is optimized for use in both SE-DE and DE-DE systems. The device hasunprecedented usable bandwidth from dc to 2 GHz. The LMH5401-SP can be used for SE-DE conversionsin the signal chain without external baluns in a wide range of applications such as test andmeasurement, broadband communications, and high-speed data acquisition.

A common-mode reference input pin is provided to align the amplifier output common-modewith the ADC input requirements. Power supplies between 3.3 V and 5 V can be selected anddual-supply operation is supported when required by the application. A power-down feature is alsoavailable for power savings.

This level of performance is achieved at a very low power level of 300 mW when a 5-Vsupply is used. The device is fabricated in Texas Instruments’ advanced complementary BiCMOSprocess and is available in a space-saving, LCCC-14 package for higher performance.

• QMLV (QML Class V) MIL-PRF-38535 Qualified, SMD 5962R1721401VXC
  • Radiation Hardness Assurance (RHA) up to 100-krad(Si) Total Ionizing Dose (TID)
  • Single Event Latchup (SEL) Immune to
    LET = 85 MeV-cm²/mg
  • Qualified Over the Military Temperature Range (–55°C to 125°C)
• Gain Bandwidth Product (GBP): 6.5 GHz
• Excellent Linearity Performance:
  DC to 2 GHz;
• Slew Rate: 17,500 V/µs
• Low HD2, HD3 Distortion
  (500 mV_PP, 100 Ω, SE-DE, Gv = 17 dB)⁽¹⁾:
  • 100 MHz: HD2 at –91 dBc, HD3 at –95 dBc
  • 200 MHz: HD2 at –86 dBc, HD3 at –85 dBc
  • 500 MHz: HD2 at –80 dBc, HD3 at –80 dBc
  • 1 GHz: HD2 at –53 dBc, HD3 at –70 dBc
  • 2 GHz: HD2 at –68 dBc, HD3 at –56 dBc
• Low IMD2, IMD3 Distortion
  (1 V_PP, 100 Ω, SE-DE, Gv = 17 dB)⁽¹⁾:
  • 500 MHz: IMD2 at –90 dBc, IMD3 at –79 dBc
  • 1 GHz: IMD2 at –80 dBc, IMD3 at –61 dBc
  • 2 GHz: IMD2 at –64 dBc, IMD3 at –42 dBc
• High OIP2, OIP3. Gp = 8 dB⁽¹⁾
  • 500 MHz: OIP2 at 91 dBm, OIP3 at 47.7 dBm
  • 1 GHz: OIP2 at 80 dBm, OIP3 at 37.5 dBm
• Input Voltage Noise: 1.25 nV/√Hz
• Input Current Noise: 3.5 pA/√Hz
• Supports Single- and Dual-Supply Operation
• Current Consumption: 60 mA
• Power-Down Feature ⁽¹⁾

⁽¹⁾Power Gain (Gp) = 8 dB; Voltage Gain (Gv) = 17 dB; RL_total = 200 Ω. See Output Reference Nodes and Gain Nomenclature section for more details.

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