The OPA202 device is built on TIs industry-leading precision super-β complementarybipolar semiconductor process which offers ultra-low flicker noise, low offset voltage, low offsetvoltage temperature drift, and excellent linearity with common-mode and power supply variation. Thedevice offers an exceptional combination of DC precision, heavy capacitive load drive, andprotection against external EMI, thermal, and short-circuit events.
Supply current is 580 µA at ±18 V. The OPA202 device does not exhibit phase inversion,and the series is stable with high capacitive loads. The OPA202 is fully specified with atemperature range from –40°C to +105°C.
Products containing the "OPA202" keyword are: OPA202ID , OPA202ID , OPA202IDBVR , OPA202IDBVT , OPA202IDBVT , OPA202IDR , OPA202IDRAll trademarks are the property of their respective owners.
Status | ACTIVE |
Number of channels | 1 |
Total Supply Voltage | 4.5 |
Vos (offset voltage @ 25 C) | 0.2 |
GBW | 1 |
Slew Rate | 0.35 |
Rail-to-rail | No |
Offset drift | 0.5 |
Iq per channel | 0.58 |
Vn at 1 kHz | 9 |
CMRR | 148 |
Rating | Catalog |
Operating temperature range | -40 to 105 |
Package Group | SOIC|8 |
Approx. price | 0.50 | 1ku |
Package size: mm2:W x L (PKG) | [pf]8SOIC[/pf]: 29 mm2: 6 x 4.9 (SOIC|8) |
Input bias current | 2000 |
Output current | 35 |
Features | High Cload Drive |
Architecture | Bipolar |
Input common mode headroom (to negative supply) | 1.5 |
Input common mode headroom (to positive supply) | -1.5 |
Output swing headroom (to negative supply) | 0.65 |
Output swing headroom (to positive supply) | -0.65 |