The TLE20x7 and TLE20x7A contain innovative circuit design expertise and high-quality process control techniques to produce a level of ac performance and dc precision previously unavailable in single operational amplifiers. Manufactured using Texas Instruments state-of-the-art Excalibur process, these devices allow upgrades to systems that use lower-precision devices.
In the area of dc precision, the TLE20x7 and TLE20x7A offer maximum offset voltages of 100 µV and 25 µV, respectively, common-mode rejection ratio of 131 dB (typ), supply voltage rejection ratio of 144 dB (typ), and dc gain of 45 V/µV (typ).
The ac performance of the TLE2027 and TLE2037 is highlighted by a typical unity-gain bandwidth specification of 15 MHz, 55° of phase margin, and noise voltage specifications of 3.3 nV/
Hz and 2.5 nV/
Hz at frequencies of 10 Hz and 1 kHz respectively. The TLE2037 and TLE2037A have been decompensated for faster slew rate (7.5 V/µs, typical) and wider bandwidth (50 MHz). To ensure stability, the TLE2037 and TLE2037A should be operated with a closed-loop gain of 5 or greater.
Both the TLE20x7 and TLE20x7A are available in a wide variety of packages, including the industry-standard 8-pin small-outline version for high-density system applications. The C-suffix devices are characterized for operation from 0°C to 70°C. The I-suffix devices are characterized for operation from 40°C to 105°C. The M-suffix devices are characterized for operation over the full military temperature range of 55°C to 125°C.
Products containing the "TLE2037A" keyword are: TLE2037ACDR , TLE2037ACDRG4 , TLE2037ACP , TLE2037AID , TLE2037AIDR , TLE2037AIDRG4 , TLE2037AIP , TLE2037AIPE4 , TLE2037AMD , TLE2037AMDG4 , TLE2037AMDG4 , TLE2037AMDR , TLE2037AMDREP , TLE2037AMDRG4 , TLE2037AQDRG4Q1 , TLE2037AQDRG4Q1 , TLE2037AQDRQ1 , TLE2037AQDRQ1
Hz at f = 10 Hz Typ,
Hz at f = 1 kHz Typ
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| Status | ACTIVE |
| Architecture | Bipolar^Voltage FB |
| Number of channels | 1 |
| Total Supply Voltage | 38 |
| BW @ Acl | 10 |
| Acl, min spec gain | 1.7 |
| Slew Rate | 7.5 |
| Vn at flatband | 3.3 |
| Vn at 1 kHz | 7.5 |
| Iq per channel | 3.8 |
| Vos (offset voltage @ 25 C) | 0.025 |
| Rail-to-rail | In^Out |
| Features | Decompensated |
| Rating | Catalog |
| Operating temperature range | -55 to 125 |
| Package Group | SOIC|8 |
| Approx. price | 1.86 | 1ku |
| Package size: mm2:W x L (PKG) | [pf]8SOIC[/pf]: 29 mm2: 6 x 4.9 (SOIC|8) |
| CMRR | 122 |
| Input bias current | 8000 |
| Offset drift | 0.4 |
| GBW | 63 |
| Output current | 50 |
| 2nd harmonic | |
| 3rd harmonic | |
| @ MHz | |
| Radiation, TID | |
| Radiation, SEL |