TLV2332 - Dual Low-Voltage Low-Power Operational Amplifier

Updated : 2020-01-09 14:20:38
Description

The TLV233x operational amplifiers are in a family of devices that has been specifically designed for use in low-voltage single-supply applications. Unlike the TLV2322 which is optimized for ultra-low power, the TLV233x is designed to provide a combination of low power and good ac performance. Each amplifier is fully functional down to a minimum supply voltage of 2 V, is fully characterized, tested, and specified at both 3-V and 5-V power supplies. The common-mode input-voltage range includes the negative rail and extends to within 1 V of the positive rail.

Having a maximum supply current of only 310 uA per amplifier over full temperature range, the TLV233x devices offer a combination of good ac performance and microampere supply currents. From a 3-V power supply, the amplifier's typical slew rate is 0.38 V/us and its bandwidth is 300 kHz.

These amplifiers offer a level of ac performance greater than that of many other devices operating at comparable power levels. The TLV233x operational amplifiers are especially well suited for use in low-current or battery-powered applications.

Low-voltage and low-power operation has been made possible by using the Texas Instruments silicon-gate LinCMOSTM technology. The LinCMOS process also features extremely high input impedance and ultra-low bias currents making these amplifiers ideal for interfacing to high-impedance sources such as sensor circuits or filter applications.

To facilitate the design of small portable equipment, the TLV233x is made available in a wide range of package options, including the small-outline and thin-shrink small-outline package (TSSOP). The TSSOP package has significantly reduced dimensions compared to a standard surface-mount package. Its maximum height of only 1.1 mm makes it particularly attractive when space is critical.

The device inputs and outputs are designed to withstand -100-mA currents without sustaining latch-up. The TLV233x incorporates internal ESD-protection circuits that prevents functional failures at voltages up to 2000 V as tested under MIL-STD 883C, Method 3015.2; however, care should be exercised in handling these devices as exposure to ESD may result in the degradation of the device parametric performance.

Products containing the "TLV2332" keyword are: TLV2332ID , TLV2332ID , TLV2332IDG4 , TLV2332IDGKR , TLV2332IDR , TLV2332IDR , TLV2332IDRG4 , TLV2332IDRG4 , TLV2332IP , TLV2332IP , TLV2332IPE4 , TLV2332IPE4 , TLV2332IPG4 , TLV2332IPW , TLV2332IPWG4 , TLV2332IPWLE , TLV2332IPWR , TLV2332IPWR , TLV2332IPWRG4
Features

  • Wide Range of Supply Voltages Over Specified Temperature Range:
  • TA = -40°C to 85°C...2 V to 8 V
  • Fully Characterized at 3 V and 5 V
  • Single-Supply Operation
  • Common-Mode Input-Voltage Range
    Extends Below the Negative Rail and up to
    VDD -1 V at TA = 25°C
  • Output Voltage Range Includes Negative Rail
  • High Input Impedance...1012 Typ
  • ESD-Protection Circuitry
  • Designed-In Latch-Up Immunity
  • LinCMOS is a trademark of Texas Instruments Incorporated.

Parametrics
StatusACTIVE
Approx. price0.63 | 1ku
Number of channels2
Total Supply Voltage2
Rail-to-railIn to V-^Out
GBW0.525
Slew Rate0.43
Package GroupPDIP|8
Vos (offset voltage @ 25 C)9
Iq per channel0.105
Vn at 1 kHz32
RatingCatalog
Operating temperature range-40 to 85
Package size: mm2:W x L (PKG)See datasheet (PDIP)
Offset drift1.7
FeaturesN/A
Input bias current200
CMRR91
Output current9
ArchitectureCMOS
Radiation, TID
Radiation, SEL
Input common mode headroom (to negative supply)-0.3
Input common mode headroom (to positive supply)-0.8
Output swing headroom (to negative supply)0.095
Output swing headroom (to positive supply)-1.2