The TLV233x operational amplifiers are in a family of devices that has been specifically designed for use in low-voltage single-supply applications. Unlike the TLV2322 which is optimized for ultra-low power, the TLV233x is designed to provide a combination of low power and good ac performance. Each amplifier is fully functional down to a minimum supply voltage of 2 V, is fully characterized, tested, and specified at both 3-V and 5-V power supplies. The common-mode input-voltage range includes the negative rail and extends to within 1 V of the positive rail.
Having a maximum supply current of only 310 uA per amplifier over full temperature range, the TLV233x devices offer a combination of good ac performance and microampere supply currents. From a 3-V power supply, the amplifier's typical slew rate is 0.38 V/us and its bandwidth is 300 kHz.
These amplifiers offer a level of ac performance greater than that of many other devices operating at comparable power levels. The TLV233x operational amplifiers are especially well suited for use in low-current or battery-powered applications.
Low-voltage and low-power operation has been made possible by using the Texas Instruments silicon-gate LinCMOSTM technology. The LinCMOS process also features extremely high input impedance and ultra-low bias currents making these amplifiers ideal for interfacing to high-impedance sources such as sensor circuits or filter applications.
To facilitate the design of small portable equipment, the TLV233x is made available in a wide range of package options, including the small-outline and thin-shrink small-outline package (TSSOP). The TSSOP package has significantly reduced dimensions compared to a standard surface-mount package. Its maximum height of only 1.1 mm makes it particularly attractive when space is critical.
The device inputs and outputs are designed to withstand -100-mA currents without sustaining latch-up. The TLV233x incorporates internal ESD-protection circuits that prevents functional failures at voltages up to 2000 V as tested under MIL-STD 883C, Method 3015.2; however, care should be exercised in handling these devices as exposure to ESD may result in the degradation of the device parametric performance.
Products containing the "TLV2332" keyword are: TLV2332ID , TLV2332ID , TLV2332IDG4 , TLV2332IDGKR , TLV2332IDR , TLV2332IDR , TLV2332IDRG4 , TLV2332IDRG4 , TLV2332IP , TLV2332IP , TLV2332IPE4 , TLV2332IPE4 , TLV2332IPG4 , TLV2332IPW , TLV2332IPWG4 , TLV2332IPWLE , TLV2332IPWR , TLV2332IPWR , TLV2332IPWRG4LinCMOS is a trademark of Texas Instruments Incorporated.
Status | ACTIVE |
Approx. price | 0.63 | 1ku |
Number of channels | 2 |
Total Supply Voltage | 2 |
Rail-to-rail | In to V-^Out |
GBW | 0.525 |
Slew Rate | 0.43 |
Package Group | PDIP|8 |
Vos (offset voltage @ 25 C) | 9 |
Iq per channel | 0.105 |
Vn at 1 kHz | 32 |
Rating | Catalog |
Operating temperature range | -40 to 85 |
Package size: mm2:W x L (PKG) | See datasheet (PDIP) |
Offset drift | 1.7 |
Features | N/A |
Input bias current | 200 |
CMRR | 91 |
Output current | 9 |
Architecture | CMOS |
Radiation, TID | |
Radiation, SEL | |
Input common mode headroom (to negative supply) | -0.3 |
Input common mode headroom (to positive supply) | -0.8 |
Output swing headroom (to negative supply) | 0.095 |
Output swing headroom (to positive supply) | -1.2 |