TLE2022A-Q1 - Automotive Excalibur High-Speed Low-Power Precision Operational Amplifiers

Updated : 2020-01-09 14:18:40
Description

The TLE202x and TLE202xA devices are precision, high-speed, low-power operational amplifiers using a new Texas Instruments Excalibur process. These devices combine the best features of the OP21 with highly improved slew rate and unity-gain bandwidth.

The complementary bipolar Excalibur process utilizes isolated vertical pnp transistors that yield dramatic improvement in unity-gain bandwidth and slew rate over similar devices.

The addition of a bias circuit in conjunction with this process results in extremely stable parameters with both time and temperature. This means that a precision device remains a precision device even with changes in temperature and over years of use.

This combination of excellent dc performance with a common-mode input voltage range that includes the negative rail makes these devices the ideal choice for low-level signal conditioning applications in either single-supply or split-supply configurations. In addition, these devices offer phase-reversal protection circuitry that eliminates an unexpected change in output states when one of the inputs goes below the negative supply rail.

A variety of available options includes small-outline versions for high-density systems applications.

The Q-suffix devices are characterized for operation over the full automotive temperature range of –40°C to 125°C.

Features

  • Qualified for Automotive Applications
  • ESD Protection Exceeds 1000 V Per MIL-STD-883, Method 3015; Exceeds 200 V Using Machine Model (C = 200 pF, R = 0)
  • Supply Current . . . 300 µA Max
  • High Unity-Gain Bandwidth . . . 2 MHz Typ
  • High Slew Rate . . . 0.45 V/µs Min
  • Supply-Current Change Over Full Temp Range . . . 10 µA Typ at VCC± = ± 15 V
  • Specified for Both 5-V Single-Supply and ±15-V Operation
  • Phase-Reversal Protection
  • High Open-Loop Gain . . . 6.5 V/µV (136 dB) Typ
  • Low Offset Voltage . . . 100 µV Max
  • Offset Voltage Drift With Time 0.005 µV/mo Typ
  • Low Input Bias Current . . . 50 nA Max
  • Low Noise Voltage . . . 19 nV/Hz Typ

Parametrics
StatusACTIVE
Number of channels2
Total Supply Voltage4
Vos (offset voltage @ 25 C)0.4
GBW1.7
Slew Rate0.5
Rail-to-railIn to V-
Offset drift2
Iq per channel0.225
Vn at 1 kHz17
CMRR102
RatingAutomotive
Operating temperature range-40 to 125
Package GroupSOIC|8
Approx. price1.18 | 1ku
Package size: mm2:W x L (PKG)[pf]8SOIC[/pf]: 29 mm2: 6 x 4.9 (SOIC|8)
Input bias current70000
Output current3
FeaturesN/A
ArchitectureBipolar
Input common mode headroom (to negative supply)-0.3
Input common mode headroom (to positive supply)-1.0
Output swing headroom (to negative supply)0.7
Output swing headroom (to positive supply)-0.7
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