The TLE2161, TLE2161A, and TLE2161B are JFET-input, low-power, precision operational amplifiers manufactured using the Texas Instruments Excalibur process. Decompensated for stability with a minimum closed-loop gain of 5, these devices combine outstanding output drive capability with low power consumption, excellent dc precision, and high gain-bandwidth product.
In addition to maintaining the traditional JFET advantages of fast slew rates and low input bias and offset currents, the Excalibur process offers outstanding parametric stability over time and temperature. This results in a device that remains precise even with changes in temperature and over years of use.
The D packages are available taped and reeled. Add R suffix to device type (e.g., TLE2161ACDR).
A variety of available options includes small-outline packages and chip-carrier versions for high-density system applications.
The C-suffix devices are characterized for operation from 0°C to 70°C. The I-suffix devices are characterized for operation from -40°C to 85°C. The M-suffix devices are characterized for operation over the full military temperature range of -55°C to 125°C.
SLOS049D - NOVEMBER 1989 - REVISED MAY 1996
Status | ACTIVE |
Approx. price | 1.19 | 1ku |
Number of channels | 1 |
Total Supply Voltage | 7 |
Rail-to-rail | In to V+ |
GBW | 6.4 |
Slew Rate | 10 |
Package Group | SOIC|8 |
Vos (offset voltage @ 25 C) | 1.5 |
Iq per channel | 0.29 |
Vn at 1 kHz | 40 |
Rating | Catalog |
Operating temperature range | 0 to 70 |
Package size: mm2:W x L (PKG) | [pf]8SOIC[/pf]: 29 mm2: 6 x 4.9 (SOIC|8) |
Offset drift | 6 |
Features | Decompensated |
Input bias current | 60 |
CMRR | 90 |
Output current | 50 |
Architecture | FET |
Radiation, TID | |
Radiation, SEL | |
Input common mode headroom (to negative supply) | 3.0 |
Input common mode headroom (to positive supply) | 1.0 |
Output swing headroom (to negative supply) | 0.3 |
Output swing headroom (to positive supply) | -0.3 |