The TLC08x-Q1 is the first general purpose operational amplifier to highlight TI's BiCMOS technology. The BiMOS family concept is simple: provide an upgrade path for BiFET users who are moving away from dual-supply to single-supply systems and demand higher AC and DC performance. With performance rated from 4.5 V to 16 V across an automotive temperature range (–40°C to 125°C), BiMOS suits a wide range of audio, automotive, industrial, and instrumentation applications.
Developed in TI’s patented LBC3 BiCMOS process, the BiMOS amplifiers combine a very high input impedance, low-noise CMOS front end with a high-drive bipolar output stage, thus providing the optimum performance features of both. AC performance improvements over the TL08x-Q1 BiFET predecessors include a bandwidth of 10 MHz and voltage noise of 8.5 nV/√Hz. These features enable the TLC08x-Q1 devices to be suitable for ADAS (such as short-range radar) and body in automotive. The TLC082-Q1 is also suitable in infotainment and cluster as a pre amp in car audio applications.
DC improvements include an ensured VICR that includes ground, a factor of four reduction in input offset voltage down to 1.5 mV (maximum), and a power-supply rejection improvement of greater than 40 dB to 130 dB. Added to this list of impressive features is the ability to drive ±50-mA loads comfortably from an ultrasmall-footprint MSOP PowerPAD package, which positions the TLC08x-Q1 as the ideal high-performance, general-purpose operational amplifier family.
For all available packages, see the orderable addendum at the end of the data sheet.All trademarks are the property of their respective owners.
Status | ACTIVE |
Approx. price | 1.28 | 1ku |
Number of channels | 4 |
Total Supply Voltage | 4.5 |
Rail-to-rail | In to V- |
GBW | 10 |
Slew Rate | 16 |
Package Group | HTSSOP|20 |
Vos (offset voltage @ 25 C) | 1.9 |
Iq per channel | 1.8 |
Vn at 1 kHz | 8.5 |
Rating | Automotive |
Operating temperature range | -40 to 125 |
Package size: mm2:W x L (PKG) | [pf]20HTSSOP[/pf]: 42 mm2: 6.4 x 6.5 (HTSSOP|20) |
Offset drift | 1.2 |
Features | N/A |
Input bias current | 50 |
CMRR | 110 |
Output current | 100 |
Architecture | CMOS |
Radiation, TID | |
Radiation, SEL | |
Input common mode headroom (to negative supply) | 0.0 |
Input common mode headroom (to positive supply) | -1.5 |
Output swing headroom (to negative supply) | 0.18 |
Output swing headroom (to positive supply) | -0.7 |