This is the first monolithic JFET input operational amplifier to incorporate well matched, high voltage JFETs on the same chip with standard bipolar transistors (BI-FET™ Technology). This amplifier features low input bias and offset currents/low offset voltage and offset voltage drift, coupled with offset adjust which does not degrade drift or common-mode rejection. The device is also designed for high slew rate, wide bandwidth, extremely fast settling time, low voltage and current noise and a low 1/f noise corner.
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Status | ACTIVE |
Approx. price | |
Number of channels | 1 |
Total Supply Voltage | 10 |
Rail-to-rail | No |
GBW | 5 |
Slew Rate | 12 |
Package Group | TO-99|8 |
Vos (offset voltage @ 25 C) | 5 |
Iq per channel | 5 |
Vn at 1 kHz | 12 |
Rating | Military |
Operating temperature range | -55 to 125 |
Package size: mm2:W x L (PKG) | [pf]8TO-99[/pf]: 80 mm2: 8.96 x 8.96 (TO-99|8) |
Offset drift | 5 |
Features | N/A |
Input bias current | 100 |
CMRR | 100 |
Output current | 25 |
Architecture | FET |
Radiation, TID | |
Radiation, SEL | |
Input common mode headroom (to negative supply) | 3.0 |
Input common mode headroom (to positive supply) | 0.1 |
Output swing headroom (to negative supply) | 2.0 |
Output swing headroom (to positive supply) | -2.0 |